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revisions ltr description date ( yr-mo-da ) approved a add vendor cage f8859. add device class v criteria. add case outline x. add table iii, delta limits. update boilerplate. editorial changes throughout. ? ltg 00-07-12 raymond monnin b add section 1.5, radiation features. move v ih and v il from table i to section 1.4. add appendix a, microcircuit die. update the boilerplate to mil-prf-38535 requirements and to include radiation hardene ss assured requirements. editorial changes throughout. ? tvn 05-02-08 thomas m. hess c correct wafer thickness in appendix a. - ltg 07-03-07 thomas m. hess current cage code 67268 rev sheet rev b b b b b b c b sheet 15 16 17 18 19 20 21 22 rev c b b b b b b b b b b b b b rev status of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by james e. nicklaus checked by d. a. dicenzo defense supply center columbus columbus, ohio 43218-3990 http://www.d scc.dla.mil approved by n. a. hauck drawing approval date 87-05-15 microcircuit, digital, advanced cmos, hex inverter, schmitt trigge r, monolithic silicon size a cage code 14933 5962-87624 standard microcircuit drawing this drawing is available for use by all departments and agencies of the department of defense amsc n/a revision level c sheet 1 of 22 dscc form 2233 apr 97 5962-e224-07
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class leve ls consisting of high reliability (device classes q and m) and space application (device class v). a c hoice of case outlines and lead finishes ar e available and are reflected in the par t or identifying number (pin). when available, a choice of radiation hardness assu rance (rha) levels are reflected in the pin. 1.2 pin . the pin is as shown in the following example: for device classes m and q: 5962 - 87624 01 c a federal rha device case lead stock class designator type outline finish designator (see 1.2.1) (see 1. 2.2) (see 1.2.4) (see 1.2.5) \ / \/ drawing number for device class v: 5962 f 87624 01 v x a federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (s ee 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices m eet the mil-prf-38535 specif ied rha levels and are marked with the appropriate rha designator. device cl ass m rha marked devices m eet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 54ac14 hex inverter schmitt trigger 1.2.3 device class designator . the device class designator is a single letter identifying the product assu rance level as listed below. since the device class designator has been added after the original issuance of this drawing, device classes m and q designators will not be included in the pi n and will not be marked on the device. device class device requirements documentation m vendor self-certification to t he requirements for mil-std-883 compliant, non-jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qua lification to mil-prf-38535
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 3 dscc form 2234 apr 97 1.2.4 case outline(s) . the case outline(s) are as des ignated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style c gdip1-t14 or cdip2-t14 14 dual-in-line d gdfp1-f14 or cdfp2-f14 14 flat pack 2 cqcc1-n20 20 leadless chip carrier x cdfp3-f14 14 flat pack 1.2.5 lead finish . the lead finish is as specified in mil- prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 1.3 absolute maximum ratings . 1 / 2 / 3 / supply voltage range (v cc ) .................................................................................. -0.5 v dc to +7.0 v dc dc input voltage range (v in ) ................................................................................ -0.5 v dc to v cc + 0.5 v dc dc output voltage range (v out ) ........................................................................... -0.5 v dc to v cc + 0.5 v dc clamp diode current (i ik , i ok )................................................................................ 20 ma dc output current (i out ) ....................................................................................... 50 ma dc v cc or gnd current (per pin) ......................................................................... 50 ma maximum power dissipation (p d ) ........................................................................ 500 mw storage temperature range (t stg ) ....................................................................... -65 c to +150 c lead temperature (solder ing, 10 seconds): case outli ne x ................................................................................................. +260 c other case outlines (exc ept case out line x) ..................................................... +245 c thermal resistance, junction-to-case ( jc ) ........................................................... see mi l-std-1835 junction temperature (t j ) .................................................................................... 175 c 4 / 1.4 recommended operating conditions . 2 / 3 / 5 / supply voltage range (v cc ) .................................................................................. +2.0 v dc to +6.0 v dc input voltage range (v in ) ...................................................................................... 0.0 v dc to v cc output voltage range (v out )................................................................................. 0.0 v dc to v cc minimum high level input voltage (v ih )................................................................. 2.1 v at v cc = 3.0 v 3.15 v at v cc = 4.5 v 3.85 v at v cc = 5.5 v maximum low level input voltage (v il ).................................................................. 0.9 v at v cc = 3.0 v 1.35 v at v cc = 4.5 v 1.65 v at v cc = 5.5 v case operating temperature range (t c ) ............................................................... -55 c to +125 c 1.5 radiation features . device type 01: total dose (dose rate = 50 ? 300 rads (si) /s) .................................................. 300 krads (si) single event latchup ( sel)............................................................................. 93 mev-cm 2 /mg 1 / stresses above the absolute maximum rating may cause pe rmanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2 / unless otherwise specified, all voltages are referenced to gnd. 3 / the limits for the parameter s specified herein shall apply over the full specified v cc range and case temperature range of -55 c to +125 c. 4 / maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of mil-std-883. 5 / operation from 2.0 v dc to 3.0 v dc is provided for com patibility with data retention and ba ttery back-up systems. data retention implies no input trans ition and no stored data loss with the following conditions: v ih 70% v cc , v il 30% v cc , v oh 70% v cc @ -20 a v ol 30% v cc @ 20 a.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 4 dscc form 2234 apr 97 2. applicable documents 2.1 government specif ication, standards, and handbooks . the following specificati on, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of thes e documents are those cited in t he solicitation or contract. department of defense specification mil-prf-38535 - integrated circuits, manufacturing, general specification for. department of defense standards mil-std-883 - test met hod standard microcircuits. mil-std-1835 - interface standard el ectronic component case outlines. department of defense handbooks mil-hdbk-103 - list of st andard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (copies of these documents are available online at http://assist.daps.dla.mil/qui cksearch/ or http://assist.daps.dla.mil or fro m the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 non-government publications . the following document(s) form a part of this document to the extent specified herein. unless otherwise specified, the iss ues of these documents ar e those cited in the so licitation or contract. electronic industries alliance (eia) jedec standard no. 20 - standard for description of 54/74acxxxx and 54/74actxxxx advanced high-speed cmos devices. (copies of these documents are available online at http://www.j edec.org or from electronic industries alliance, 2500 wilson boulevard, arli ngton, va 22201-3834.) 2.3 order of precedence . in the event of a conflict between the text of this drawing and the refe rences cited herei n, the text of this drawing takes precedence. nothing in this documen t, however, supersedes applicable laws and regulations unless a specific exempti on has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacture r's quality management (qm) plan. the modification in the qm plan shall not affe ct the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.1.1 microcircuit die . for the requirements of microcircu it die, see appendix a to this document. 3.2 design, construction, and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines . the case outlines shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections . the terminal connections shall be as specified on figure 1. 3.2.3 truth table . the truth table shall be as specified on figure 2. 3.2.4 logic diagram . the logic diagram shall be as specified on figure 3.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 5 dscc form 2234 apr 97 3.2.5 switching waveforms and test circuit . the switching waveforms and test circ uit shall be as specified on figure 4. 3.2.6 radiation exposure circuit . the radiation exposure circuit shall be ma intained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 electrical performance characteri stics and postirradiati on parameter limits . unless otherwise specified herein, the electrical performance characteristics and pos t irradiation parameter limits are as s pecified in table i and shall apply over t he full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in table ii. the electrical tests for each subgroup are defined in table i. 3.5 marking . the part shall be marked with the pin listed in 1.2 her ein. in addition, the manufacturer's pin may also be marked. for packages where marking of t he entire smd pin number is not feasible due to space lim itations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q and v shall be in accor dance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certificat ion/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to t he requirements of this draw ing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to dscc-va prior to lis ting as an approved source of supply for this drawing shall affirm that the manufacture r's product meets, for device classes q and v, the requirement s of mil-prf-38535 and herein or for device class m, the require ments of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformanc e as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable requir ed documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 36 (see mil-prf-38535, appendix a).
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 6 dscc form 2234 apr 97 table i. electrical performance characteristics . limits 4 / test and mil-std-883 test method 1 / symbol test conditions 2 / 3 / -55 c t c +125 c +3.0 v v cc +5.5 v unless otherwise specified device type and device class v cc group a subgroups min max unit all all 3.0 v 1, 2, 3 2.9 all all 4.5 v 1, 2, 3 4.4 for all inputs affecting output under test, v in = v ih minimum or v il maximum for all other inputs, v in = v cc or gnd i oh = -50 a all all 5.5 v 1, 2, 3 5.4 for all inputs affecting output under test, v in = v ih minimum or v il maximum for all other inputs, v in = v cc or gnd i oh = -12 ma all all 3.0 v 1, 2, 3 2.4 all all 4.5 v 1, 2, 3 3.7 for all inputs affecting output under test, v in = v ih minimum or v il maximum for all other inputs, v in = v cc or gnd i oh = -24 ma all all 5.5 v 1, 2, 3 4.7 high level output voltage 3006 v oh 5 / for all inputs affecting output under test, v in = v ih minimum or v il maximum for all other inputs, v in = v cc or gnd i oh = -50 ma all all 5.5 v 1, 2, 3 3.85 v all all 3.0 v 1, 2, 3 0.1 all all 4.5 v 1, 2, 3 0.1 for all inputs affecting output under test, v in = v ih minimum or v il maximum for all other inputs, v in = v cc or gnd i ol = 50 a all all 5.5 v 1, 2, 3 0.1 for all inputs affecting output under test, v in = v ih minimum or v il maximum for all other inputs, v in = v cc or gnd i ol = 12 ma all all 3.0 v 1, 2, 3 0.5 all all 4.5 v 1, 2, 3 0.5 for all inputs affecting output under test, v in = v ih minimum or v il maximum for all other inputs, v in = v cc or gnd i ol = 24 ma all all 5.5 v 1, 2, 3 0.5 low level output voltage 3007 v ol 5 / for all inputs affecting output under test, v in = v ih minimum or v il maximum for all other inputs, v in = v cc or gnd i ol = 50 ma all all 5.5 v 1, 2, 3 1.65 v see footnotes at end of table.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 7 dscc form 2234 apr 97 table i. electrical performance characteristics - continued. limits 4 / test and mil-std-883 test method 1 / symbol test conditions 2 / 3 / -55 c t c +125 c +3.0 v v cc +5.5 v unless otherwise specified device type and device class v cc group a subgroups min max unit 3.0 v 2.2 4.5 v 3.2 positive-going threshold voltage v t+ all all 5.5 v 1, 2, 3 3.9 v 3.0 v 0.5 4.5 v 0.9 negative-going threshold voltage v t- all all 5.5 v 1, 2, 3 1.1 v 3.0 v 0.3 1.2 4.5 v 0.4 1.4 hysterisis voltage v hys all all 5.5 v 1, 2, 3 0.5 1.6 v positive input clamp voltage 3022 v ic+ for input under test, i in = 1.0 ma all v 0.0 v 1 0.4 1.5 v negative input clamp voltage 3022 v ic- for input under test, i in = -1.0 ma all v open 1 -0.4 -1.5 v 1 0.1 input current high 3010 i ih for input under test, v in = v cc for all other inputs, v in = v cc or gnd all all 5.5 v 2, 3 1.0 a 1 -0.1 input current low 3009 i il for input under test, v in = gnd for all other inputs, v in = v cc or gnd all all 5.5 v 2, 3 -1.0 a 1 4.0 for all inputs, v in = v cc or gnd i o = 0 a all all 2, 3 80.0 quiescent supply current, output high 3005 i cch m, d, p, l, r, f 6 / 01 q, v 5.5 v 1 50.0 a 1 4.0 for all inputs, v in = v cc or gnd i o = 0 a all all 2, 3 80.0 quiescent supply current, output low 3005 i ccl m, d, p, l, r, f 6 / 01 q, v 5.5 v 1 50.0 a input capacitance 3012 c in see 4.4.1c t c = +25 c all all 5.0 v 4 8.0 pf power dissipation capacitance c pd 7 / see 4.4.1c t c = +25 c all all 5.0 v 4 50.0 pf see footnotes at end of table.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 8 dscc form 2234 apr 97 table i. electrical performance characteristics - continued. limits 4 / test and mil-std-883 test method 1 / symbol test conditions 2 / 3 / -55 c t c +125 c +3.0 v v cc +5.5 v unless otherwise specified device type and device class v cc group a subgroups min max unit all all 3.0 v 7, 8 l h functional tests 3014 8 / for all inputs, v in = v ih minimum or v il maximum verify output v out see 4.4.1b all all 5.5 v 7, 8 l h 9 1.0 11.5 3.0 v 10, 11 1.0 14.0 9 1.0 8.5 t phl 9 / all all 4.5 v 10, 11 1.0 10.0 9 1.0 13.5 all all 3.0 v 10, 11 1.0 16.0 9 1.0 10.0 propagation delay time, an to yn 3003 t plh 9 / c l = 50 pf minimum r l = 500 ? see figure 4 4.5 v 10, 11 1.0 12.0 ns 1 / for tests not listed in the referenced mil-std-883, [e.g. v t+ , v t- ], utilize the general test pr ocedure under the conditions listed herein. 2 / each input/output, as applicable, shall be te sted at the specified temper ature, for the specified lim its, to the tests in tab le i herein. output terminals not designated shall be high level logic, low level logic, or open, except as follows: a. for v ic+ tests, the gnd terminal can be open. t c = +25 c. b. for v ic- tests, the v cc terminal shall be open. t c = +25 c. c. for all i cc tests, the output terminal shall be open. when performing these tests, the current meter shall be placed in the circuit such that all current flows through the meter. the values to be used for v ih minimum and v il maximum shall be those values listed in section 1.4 herein. 3 / rha parts for device type 01 meet all levels m, d, p, l, r, and f of irradiation. however, these parts are only tested at th e ?f? level. pre and post irradiation values are identical unless otherwise specified in table i. when performing post irradiation electrical measur ements for any rha level, t a = 25 c. 4 / for negative and positive voltage and current values, the sign des ignates the potential differenc e in reference to gnd and the direction of current flow, respectively ; and the absolute value of t he magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. all devices shall meet or exceed the limit s specified in table i, as applicable, at 3.0 v v cc 3.6 v and 4.5 v v cc 5.5 v.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 9 dscc form 2234 apr 97 table i. electrical performance characteristics - continued. 5 / the v oh and v ol tests shall be tested at v cc = 3.0 v and 4.5 v. the v oh and v ol tests are guaranteed, if not tested, for other values of v cc . limits shown apply to operation at v cc = 3.3 v 0.3 v and v cc = 5.0 v 0.5 v. tests with input current at +50 ma and ?50 ma are perform ed on only one input at a time with durat ion not to exceed 10 ms. transmission driving tests may be performed using v in = v cc or gnd. when v in = v cc or gnd is used, the test is guaranteed for v in = v ih minimum and v il maximum. 6 / the maximum limit for this parameter at 100 krads (si) is 4 a. 7 / power dissipation capacitance (c pd ) determines both the power consumption (p d ) and dynamic current consumption (i s ). where: p d = (c pd + c l ) (v cc x v cc )f + (i cc x v cc ) i s = (c pd + c l ) v cc f + i cc for both p d and i s , f is the frequency of the input signal and c l is the external out put load capacitance. 8 / tests shall be performed in sequence, attr ibutes data only. functional tests sha ll include the truth table and other logic patterns used for fault detection. the test vectors used to verify the truth table sha ll, at a minimum, test all functions of each input and output. all possible input to output logic pattern s per function shall be guaranteed, if not tested, to the tru th table in figure 2 herein. functional tests shall be perform ed in sequence as approved by the qualifying activity on qualified devices. allowable tolerances in accordance with mil-st d-883 for the input voltage leve ls may be incorporated. for output measurements, h 0.7v cc , l 0.3v cc . 9 / the ac limits at v cc = 5.5 v are equal to the limits at v cc = 4.5 v and guaranteed by testing at v cc = 4.5 v. the ac limits at v cc = 3.6 v are equal to the limits at v cc = 3.0 v and guaranteed by testing at v cc = 3.0 v. minimum ac limits for v cc = 5.5 v and v cc = 3.6 v are 1.0 ns and guaranteed by guardbanding the v cc = 4.5 v and v cc = 3.0 v minimum limits, respectively, to 1.5 ns. for propagation delay tests, all paths must be tested.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 10 dscc form 2234 apr 97 device type all case outlines c, d, and x 2 terminal number terminal symbol 1 1a nc 2 1y 1a 3 2a 1y 4 2y 2a 5 3a nc 6 3y 2y 7 gnd nc 8 4y 3a 9 4a 3y 10 5y gnd 11 5a nc 12 6y 4y 13 6a 4a 14 v cc 5y 15 --- nc 16 --- 5a 17 --- nc 18 --- 6y 19 --- 6a 20 --- v cc figure 1. terminal connections .
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 11 dscc form 2234 apr 97 each inverter input output a y h l l h h = high voltage level l = low voltage level figure 2. truth table . figure 3. logic diagram .
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 12 dscc form 2234 apr 97 notes: 1. c l = 50 pf minimum or equivalent (includes probe and jig capacitance). 2. r l = 500 ? or equivalent. 3. input signal from pulse generator: v in = 0.0 v to v cc ; prr 1 mhz; z o = 50 ?; t r 3.0 ns; t f 3.0 ns; t r and t f shall be measured from 10% of v cc to 90% of v cc and from 90% of v cc to 10% of v cc , respectively; duty cycle = 50 percent. 4. timing parameters shall be tested at a minimum input frequency of 1mhz. 5. the outputs are measured one at a time with one transition per measurement. figure 4. switching waveforms and test circuit .
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 13 dscc form 2234 apr 97 4. verification 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the devic e manufacturer's quality m anagement (qm) plan. the modification in the qm plan shall not affect the form, fit, or functi on as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf- 38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. fo r device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conducted on all devices prio r to quality conformance inspection. 4.2.1 additional criteria for device class m . a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manuf acturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, output s, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameter s shall be as specified in table ii herein. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condi tion and test temperature, or approved alte rnatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf- 38535. the burn-in test circuit shall be maintained under document revision level control of t he device manufacturer's technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, output s, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of mil-std-883. b. interim and final electrical test parameter s shall be as specified in table ii herein. c. additional screening for device class v beyond the require ments of device class q shall be as specified in mil-prf-38535, appendix b. 4.3 qualification inspecti on for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspecti ons (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for classes q and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified herein. quality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendi x a and as specified herein. inspections to be performed for device class m shall be those specifi ed in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4).
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 14 dscc form 2234 apr 97 4.4.1 group a inspection a. tests shall be as spec ified in table ii herein. b. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. the test vectors used to verify the truth table s hall, at a minimum, test all functions of each input and output. all possible input to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figur e 2, herein. for device classes q and v, subgroups 7 and 8 shall include verifying the functiona lity of the device. c. c in and c pd shall be measured only for initia l qualification and after process or design changes which may affect capacitance. c in shall be measured between t he designated terminal and gnd at a frequency of 1 mhz. c pd shall be tested in accordance with the latest revision of jedec standard no. 20 and table i herein. for c in and c pd , test all applicable pins on five devices with zero failures. 4.4.2 group c inspection . the group c inspection end-point electrical param eters shall be as specif ied in table ii herein. 4.4.2.1 additional criteria for device class m . steady-state life test condi tions, method 1005 of mil-std-883: a. test condition a, b, c, or d. the test circuit sha ll be maintained by the manufacturer under document revision level control and shall be made available to t he preparing or acquiring activity upon reques t. the test circuit shall specify the inputs, outputs, bias es, and power dissipation, as applicable, in acco rdance with the intent specified in method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hour s, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as spec ified in the device manufacturer's qm pl an in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level c ontrol by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon r equest. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance wi th the intent specif ied in method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end-point electrical param eters shall be as specif ied in table ii herein. 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. end-point electrical parameters shall be as spec ified in table ii herein. b. for device classes q and v, the devices or test vehicl e shall be subjected to radiat ion hardness assured tests as specified in mil-prf-38535 for the rha le vel being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as specified in mil-prf-38535, appendix a fo r the rha level being tested. all device classes must meet the postirr adiation end-point electric al parameter limits as defined in table i at t a = +25 c 5 c, after exposure, to the subgroups specified in table ii herein. c. rha tests for device classes m, q, and v for levels m, d, p, l, r, and f shall be performed through each level to determine at what levels the devices meet the rha requirements. these rha tests shall be performed for initial qualification and after design or process changes whic h may affect the rha per formance of the device. d. prior to irradiation, each selected sample shall be asse mbled in its qualified package. it shall pass the specified group a electrical parameters in table i fo r subgroups specified in table ii herein.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 15 dscc form 2234 apr 97 table ii. electrical test requirements . subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) test requirements device class m device class q device class v interim electrical parameters (see 4.2) --- --- 1 final electrical parameters (see 4.2) 1 / 1, 2, 3, 7, 8, 9 1 / 1, 2, 3, 7, 8, 9 2 / 3 / 1, 2, 3, 7, 8, 9, 10, 11 group a test requirements (see 4.4) 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 group c end-point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 3 / 1, 2, 3, 7, 8, 9, 10, 11 group d end-point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 1, 2, 3 group e end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1 / pda applies to subgroup 1. 2 / pda applies to subgroups 1, 7, and deltas. 3 / delta limits, as specified in table iii, sha ll be required where specif ied and the delta limits shall be completed with reference to the zero hour electrical parameters. table iii. burn-in and operating life test, delta parameters (+25 c) . 1 / parameter 2 / symbol delta limits quiescent supply current i cch , i ccl 150 na input current low level i il 20 na input current high level i ih 20 na output voltage low level (v cc = 5.5 v, i ol = 24 ma) v ol 0.04 v output voltage high level (v cc = 5.5 v, i oh = -24 ma) v oh 0.20 v 1 / this table is representation of what vendor cage f8859 has experienced and is guaranteed and not meant to be construed as a quality assurance requi rement for any other vendor. 2 / these parameters shall be recorded before and after the required burn-in and life test s to determined delta limits.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 16 dscc form 2234 apr 97 4.4.4.1 total dose irradiation testing . total dose irradiation testing shall be performed in accordance with mil-std-883, method 1019, condition a, and as s pecified herein. prior to and during total dos e irradiation characterization and testing, th e devices for characterization shall be bias ed so that 50 percent are at inputs high and 50 percent are at inputs low, and the devices for testing shall be biased to the worst case condition established during characterizati on. devices shall be biased a s follows: a. inputs tested high, v cc = 5.5 v dc 5%, v in = 5.0 v dc +10%, r in = 1 k ? 20%, and all outputs are open. b. inputs tested low, v cc = 5.5 v dc 5%, v in = 0.0 v, r in = 1 k ? 20%, and all outputs are open. 4.4.4.1.1 accelerated aging test . accelerated aging shall be performed on cl asses m, q, and v devices requiring an rha level greater than 5k rads (si). the pos t-anneal end-point electrical par ameter limits shall be as s pecified in table i herein and shall be the pre-irradiat ion end-point electrical parameter limit at 25 c 5 c. testing shall be perform ed at initial qualification and after any design or process changes which ma y affect the rha response of the device. 4.5 methods of inspection . methods of inspection shall be specified as follows: 4.5.1 voltage and current . unless otherwise specified, all voltages given are referenced to the microcircuit gnd terminal. currents given are conventional current and positive when flowing into the referenced terminal. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are int ended for use for government microcircuit applications (original equipment), design applic ations, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing w ill replace the same generic device covered by a contractor-prepared specif ication or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this c oordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform defens e supply center columbus (dscc) when a system application requires configuration control and which smd's are applicabl e to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelect ronic devices (fsc 5962) should contac t dscc-va, telephone (614) 692-0544. 6.4 comments . comments on this drawing should be directed to dscc-va , columbus, ohio 43218-3990, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and def initions used herein are defined in mil-prf-38535 and mil-hdbk-1331. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submi tted a certificate of co mpliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for cl ass m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agr eed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 17 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-87624 a.1 scope a.1.1 scope . this appendix establishes minimum requirements for microcircuit die to be s upplied under the qualified manufacturers list (qml) program. qml microcircuit die meeting the requirements of mi l-prf-38535 and the manufacturers approved qm plan for use in monolithic microc ircuits, multi-chip modules (mcms), hybr ids, electronic modules, or devices using chip and wire designs in accordance with mil-prf-38534 are spec ified herein. two product assu rance classes consisting of military high reliability (device class q) and space application (device class v) are refl ected in the part or identification n umber (pin). when available, a choice of radiation hardi ness assurance (rha) levels are reflected in the pin. a.1.2 pin . the pin is as shown in the following example: for device class q: 5962 f 87624 01 9 a federal rha device die die stock class designator type code detail designator (see a.1. 2.1) (see a.1.2.2) (see a.1.2.4) \ / \/ drawing number for device class v: 5962 f 87624 01 v 9 a federal rha device device die die stock class designator type class code details designator (see a.1.2.1) (see a.1.2.2) designat or (see a.1.2.4) \ / (see a.1.2.3) \/ drawing number a.1.2.1 rha designator . device classes q and v rha identified die meet the mil-prf-38535 specified rha levels. a dash (-) indicates a non-rha die. a.1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 54ac14 hex inverter schmitt trigger a.1.2.3 device class designator . device class q designator will not be in cluded in the pin and will not be marked on the device since the device class desi gnator has been added after the original issuance of this drawing. device class device requirements documentation q or v certification and qualification to the die r equirements of mil-prf-38535
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 18 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-87624 a.1.2.4 die details . the die details designation is a unique letter whic h designates the die's physical dimensions, bonding pad location(s) and related electrical function( s), interface materials, and other assemb ly related information, for each product a nd variant supplied to this appendix. a.1.2.4.1 die physical dimensions . die type figure number 01 a-1 a.1.2.4.2 die bonding pad locati ons and electrical functions . die type figure number 01 a-1 a.1.2.4.3 interface materials . die type figure number 01 a-1 a.1.2.4.4 assembly related information . die type figure number 01 a-1 a.1.3 absolute maximum ratings . see paragraph 1.3 herein for details. a.1.4 recommended operating conditions . see paragraph 1.4 herein for details.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 19 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-87624 a.2. applicable documents a.2.1 government specif ication, standards, and handbooks . the following specificat ion, standard, and handbooks form a part of this drawing to the extent specif ied herein. unless otherwise specified, t he issues of these doc uments are those cited in the solicitation or contract. department of defense specification mil-prf-38535 - integrated circuits, manufacturing, general specification for. department of defense standard mil-std-883 - test met hod standard microcircuits. department of defense handbooks mil-hdbk-103 - list of st andard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (copies of these documents are available online at http://assist.daps.dla.mil/qui cksearch/ or http://assist.daps.dla.mil or fro m the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) a.2.2 order of precedence . in the event of a conflict betw een the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this document, however, supers edes applicable laws and regulations unless a specific exempti on has been obtained. a.3 requirements a.3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacture r?s quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. a.3.2 design, construc tion and physical dimensions . the design, construction, and physica l dimensions shall be as specified in mil-prf-38535 and herein and the manufacture r?s qm plan for device classes q and v. a.3.2.1 die physical dimensions . the die physical dimensions shall be as specified in a.1.2. 4.1 and on figure a-1. a.3.2.2 die bonding pad locati ons and electrical functions . the die bonding pad locations and electrical functions shall be as specified in a.1.2. 4.2 and on figure a-1. a.3.2.3 interface materials . the interface materials for the die shall be as specified in a.1. 2.4.3 and on figure a-1. a.3.2.4 assembly related information . the assembly related information s hall be as specified in a.1.2.4.4 and on figure a-1. a.3.2.5 truth table . the truth table shall be as defined in paragraph 3.2.3 herein. a.3.2.6 radiati on exposure circuit . the radiation exposure circuit sha ll be as defined in par agraph 3.2.6 herein. a.3.3 electrical performance characteri stics and post-irradiat ion parameter limits . unless otherwise specified herein, the electrical performance characteristics and pos t-irradiation parameter limit s are as specified in tabl e i of the body of this document. a.3.4 electrical test requirements . the wafer probe test requirements shall in clude functional and parametric testing sufficient to make the packaged die capable of meeting the electrical perfo rmance requirements in table i.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 20 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-87624 a.3.5 marking . as a minimum, each unique lot of die, loaded in single or multiple stack of carri ers, for shipment to a customer, shall be identified with the wa fer lot number, the certification mark, t he manufacturer?s ident ification and the pin listed in a.1.2 herein. the certific ation mark shall be a ?qml? or ?q? as required by mil-prf-38535. a.3.6 certificat ion of compliance . for device classes q and v, a certificat e of compliance shall be required from a qml-38535 listed manufacturer in order to suppl y to the requirements of this drawing (see a.6.4 herein). the certificate of compliance submitted to dscc-va prior to listing as an approv ed source of supply for this appendix shall affirm that the manufacturer?s product meets, for device classes q and v, t he requirements of mil-prf-38535 and the requirements herein. a.3.7 certificat e of conformance . a certificate of conformance as requi red for device classes q and v in mil-prf-38535 shall be provided with each lot of microc ircuit die delivered to this drawing. a.4 verification a.4.1 sampling and inspection . for device classes q and v, die sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer?s qualit y management (qm) plan. the modifications in the qm plan shall not affect the form, fi t, or function as described herein. a.4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf- 38535, and as defined in the manufacturer?s qm plan. as a minimum, it shall consist of: a. wafer lot acceptance for class v product using the criteria defined in mil-std-883, method 5007. b. 100% wafer probe (see paragraph a.3.4 herein). c. 100% internal visual inspection to the applicable class q or v criteria defined in mil-std-883, method 2010 or the alternate procedures allowed in mil-std-883, method 5004. a.4.3 conformance inspection . a.4.3.1 group e inspection . group e inspection is required only for parts in tended to be identified as radiation assured (see a.3.5 herein). rha levels for device classes q and v shall be as specified in mil-prf-38535. end point electrical testing of packaged die shall be as specified in tabl e ii herein. group e tests and conditions ar e as specified in paragraphs 4.4.4 herei n. a.5 die carrier a.5.1 die carrier requirements . the requirements for the die carrier shall be accordance with the manufacturer?s qm plan or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical and electrostatic protection. a.6 notes a.6.1 intended use . microcircuit die conforming to this drawing are in tended for use in microcircuits built in accordance with mil-prf-38535 or mil-prf-38534 for government microcircuit applications (origi nal equipment), design applications, and logistics purposes. a.6.2 comments . comments on this appendix should be directed to dscc-va, columbus, ohio, 43218-3990 or telephone (614) 692-0547. a.6.3 abbreviations, symbols, and definitions . the abbreviations, symbols, and def initions used herein are defined in mil-prf-38535 and mil-hdbk-1331. a.6.4 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed within qml-38535 have s ubmitted a certificate of compliance (see a.3.6 herein) to dscc-va and have agreed to this drawing.
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level c sheet 21 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-87624 die physical dimensions . die size: 76.4 x 62.1 mils die thickness: 285 25 m (11 1 mils) die bonding pad locations and electrical functions . pad size: pad numbers 1 to 6 and 8 to 13: 100 x 100 m pad numbers 7 (gnd) and 14 (v cc ): 100 x 280 m note: pad numbers reflect terminal numbers w hen placed in case outline x (see figure 1). figure a-1 optional manufacture?s logo
size a 5962-87624 standard microcircuit drawing defense supply center columbus columbus, ohio 43218-3990 revision level b sheet 22 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-87624 interface materials . top metallization: al si cu 0.85 m backside metallization: none glassivation. type: p. vapox + nitride thickness: 0.5 m ? 0.7 m substrate: silicon assembly related information . substrate potential: fl oating or tied to gnd special assembly instructions: bond pad #14 (v cc ) first figure a-1 ? continued.
standard microcircuit drawing bulletin date: 07-03-07 approved sources of supply for smd 5962- 87624 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next re vision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the v endors listed below have agreed to this drawing and a certificate of compli ance has been submitted t o and accepted by dscc-va. this information bulletin is s uperseded by the next dated revisi on of mil-hdbk-103 and qml-38535. dscc maintains an online database of all current sources of supply at http:// www.d scc.dla.mil/programs/smcr/. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962-8762401ca 27014 01295 0c7v7 54ac14dmqb snj54ac14j 54ac14dmqb 5962-8762401da 27014 01295 0c7v7 54ac14fmqb snj54ac14w 54ac14fmqb 5962-87624012a 27014 01295 0c7v7 54ac14lmqb snj54ac14fk 54ac14lmqb 5962-8762401vca 01295 snv54ac14j 5962-8762401vda 01295 snv54ac14w 5962-8762401xa 3 / 54ac14k02q 5962-8762401xc 3 / 54ac14k01q 5962-8762401vxa 3 / 54ac14k02v 5962-8762401vxc 3 / 54ac14k01v 5962f8762401ca f8859 rhfac14d04q 5962f8762401cc f8859 rhfac14d03q 5962f8762401vca f8859 rhfac14d04v 5962f8762401vcc f8859 rhfac14d03v 5962f8762401xa f8859 rhfac14k02q 5962f8762401xc f8859 rhfac14k01q 5962f8762401vxa f8859 rhfac14k02v 5962f8762401vxc f8859 RHFAC14K01V 5962f87624019a 3 / ac14die2q 5962f8762401v9a f8859 ac14die2v 1 / the lead finish shown for each pin representing a hermetic package is the most readily av ailable from the manufacturer listed for that part. if the des ired lead finish is not listed, contact the vendor to det ermine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requi rements of this drawing. 3 / not available from an approved source of supply. sheet 1 of 2
standard microcircuit drawing bulletin ? continued. vendor cage vendor name number and address 27014 national semiconductor 2900 semiconductor drive p.o. box 58090 santa clara, ca 95052-8090 01295 texas instruments, inc. semiconductor group 8505 forest lane p.o. box 660199 dallas, tx 75243 point of contact: u.s. highway 75 south p.o. box 84, m/s 853 sherman, tx 75090-9493 f8859 st microelectronics 3 rue de suisse cs 60816 35208 rennes cedex2 - france 0c7v7 qp semiconductor 2945 oakmead village court santa clara, ca 95051 the information contained herein is di sseminated for convenience only and the government assumes no liability whats oever for any inaccuracies in the information bulletin. sheet 2 of 2

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